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Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles cal...
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| 主要な著者: | , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
National Academy of Sciences
2014
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4210051/ https://ncbi.nlm.nih.gov/pubmed/25246584 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1409701111 |
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