Carregant...

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles cal...

Descripció completa

Guardat en:
Dades bibliogràfiques
Autors principals: Zhou, Miao, Ming, Wenmei, Liu, Zheng, Wang, Zhengfei, Li, Ping, Liu, Feng
Format: Artigo
Idioma:Inglês
Publicat: National Academy of Sciences 2014
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4210051/
https://ncbi.nlm.nih.gov/pubmed/25246584
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1409701111
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!