טוען...
Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles cal...
שמור ב:
| Main Authors: | , , , , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
National Academy of Sciences
2014
|
| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4210051/ https://ncbi.nlm.nih.gov/pubmed/25246584 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1409701111 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|