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Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling
For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semicon...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4236754/ https://ncbi.nlm.nih.gov/pubmed/25407432 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep07102 |
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