Electroluminescence and Photocurrent Generation from Atomically Sharp WSe(2)/MoS(2) Heterojunction p–n Diodes

[Image: see text] The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here...

Celý popis

Uloženo v:
Podrobná bibliografie
Hlavní autoři: Cheng, Rui, Li, Dehui, Zhou, Hailong, Wang, Chen, Yin, Anxiang, Jiang, Shan, Liu, Yuan, Chen, Yu, Huang, Yu, Duan, Xiangfeng
Médium: Artigo
Jazyk:Inglês
Vydáno: American Chemical Society 2014
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4189621/
https://ncbi.nlm.nih.gov/pubmed/25157588
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl502075n
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky