Electroluminescence and Photocurrent Generation from Atomically Sharp WSe(2)/MoS(2) Heterojunction p–n Diodes

[Image: see text] The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here...

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Autors principals: Cheng, Rui, Li, Dehui, Zhou, Hailong, Wang, Chen, Yin, Anxiang, Jiang, Shan, Liu, Yuan, Chen, Yu, Huang, Yu, Duan, Xiangfeng
Format: Artigo
Idioma:Inglês
Publicat: American Chemical Society 2014
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4189621/
https://ncbi.nlm.nih.gov/pubmed/25157588
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl502075n
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