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Gate-tunable carbon nanotube–MoS(2) heterojunction p-n diode

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-per...

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Detalhes bibliográficos
Main Authors: Jariwala, Deep, Sangwan, Vinod K., Wu, Chung-Chiang, Prabhumirashi, Pradyumna L., Geier, Michael L., Marks, Tobin J., Lauhon, Lincoln J., Hersam, Mark C.
Formato: Artigo
Idioma:Inglês
Publicado em: National Academy of Sciences 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3831469/
https://ncbi.nlm.nih.gov/pubmed/24145425
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1317226110
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