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Electroluminescence and Photocurrent Generation from Atomically Sharp WSe(2)/MoS(2) Heterojunction p–n Diodes

[Image: see text] The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here...

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Detalhes bibliográficos
Main Authors: Cheng, Rui, Li, Dehui, Zhou, Hailong, Wang, Chen, Yin, Anxiang, Jiang, Shan, Liu, Yuan, Chen, Yu, Huang, Yu, Duan, Xiangfeng
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2014
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4189621/
https://ncbi.nlm.nih.gov/pubmed/25157588
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl502075n
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