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Coexistence of memory resistance and memory capacitance in TiO(2) solid-state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO(2)-based two-terminal cells. Our Pt/TiO(2)/TiO( x )/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer
2014
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4189047/ https://ncbi.nlm.nih.gov/pubmed/25298759 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-552 |
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