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Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
This study examined the correlation between the off-state leakage current and dynamic on-resistance (R(ON)) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The R(ON) transients in a Schottky-gate HFET (SGHFET...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2014
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4160917/ https://ncbi.nlm.nih.gov/pubmed/25258601 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-474 |
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