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The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical s...
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| Publicado no: | Materials (Basel) |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7216000/ https://ncbi.nlm.nih.gov/pubmed/32316694 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13081903 |
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