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Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone
[Image: see text] We present an Al(2)O(3) dielectric layer on molybdenum disulfide (MoS(2)), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using...
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| Huvudupphovsmän: | , , , , , , , |
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| Materialtyp: | Artigo |
| Språk: | Inglês |
| Publicerad: |
American
Chemical Society
2014
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| Länkar: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4134179/ https://ncbi.nlm.nih.gov/pubmed/25025335 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/am5032105 |
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