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Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm(2)/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm(2)/vs and wide-bandgap is not suitable fo...
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| Hauptverfasser: | , , , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group
2014
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4018964/ https://ncbi.nlm.nih.gov/pubmed/24824778 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep04948 |
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