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Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress ha...
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| Hlavní autoři: | , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2014
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3935196/ https://ncbi.nlm.nih.gov/pubmed/24569601 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep04179 |
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