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Visualization of carrier dynamics in p(n)-type GaAs by scanning ultrafast electron microscopy

Four-dimensional scanning ultrafast electron microscopy is used to investigate doping- and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured time-resolved secondary electrons depending...

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Bibliografiske detaljer
Main Authors: Cho, Jongweon, Hwang, Taek Yong, Zewail, Ahmed H.
Format: Artigo
Sprog:Inglês
Udgivet: National Academy of Sciences 2014
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3926039/
https://ncbi.nlm.nih.gov/pubmed/24469803
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1400138111
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