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Visualization of carrier dynamics in p(n)-type GaAs by scanning ultrafast electron microscopy
Four-dimensional scanning ultrafast electron microscopy is used to investigate doping- and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured time-resolved secondary electrons depending...
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| Main Authors: | , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
National Academy of Sciences
2014
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3926039/ https://ncbi.nlm.nih.gov/pubmed/24469803 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1400138111 |
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