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Self-compliance-improved resistive switching using Ir/TaO(x)/W cross-point memory
Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaO( x )/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and mor...
Tallennettuna:
| Päätekijät: | , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer
2013
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3878451/ https://ncbi.nlm.nih.gov/pubmed/24341544 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-527 |
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