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Measurements of G-values for DNA Damage Induced by Low Energy Electrons
We address the problem of measurement of G-values (damage per deposited energy) for low energy electrons (LEEs) below 30 eV. Such values (G(LEE)) usually have to be derived from damage yields in nanometer (~10nm) thick films, which are too thin to allow complete absorption of the energy of LEEs. In...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
2011
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3846539/ https://ncbi.nlm.nih.gov/pubmed/22035128 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/jp207922n |
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