Carregant...
Quantum Conductance in Silicon Oxide Resistive Memory Devices
Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which const...
Guardat en:
| Autors principals: | , , , , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2013
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3776960/ https://ncbi.nlm.nih.gov/pubmed/24048282 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02708 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|