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Quantum Conductance in Silicon Oxide Resistive Memory Devices
Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which const...
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| 主要な著者: | , , , , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2013
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3776960/ https://ncbi.nlm.nih.gov/pubmed/24048282 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02708 |
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