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Characterization of SiGe thin films using a laboratory X-ray instrument
The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si(0.4)Ge(0.6) films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source wi...
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| Main Authors: | , , , , , |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
International Union of Crystallography
2013
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3769059/ https://ncbi.nlm.nih.gov/pubmed/24046495 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S0021889813010492 |
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