InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition

The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 10(5) to 10(10) cm(−2) by simply manipulating V/III rati...

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Detalhes bibliográficos
Main Authors: Li, Senlin, Chen, Qingqing, Sun, Shichuang, Li, Yulian, Zhu, Qiangzhong, Li, Juntao, Wang, Xuehua, Han, Junbo, Zhang, Junpei, Chen, Changqing, Fang, Yanyan
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2013
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3765830/
https://ncbi.nlm.nih.gov/pubmed/23984719
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-367
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