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Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism

The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both elect...

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Podrobná bibliografie
Hlavní autoři: Zhou, Ye, Han, Su-Ting, Sonar, Prashant, Roy, V. A. L.
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group 2013
Témata:
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3728587/
https://ncbi.nlm.nih.gov/pubmed/23900459
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02319
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