טוען...
Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism
The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both elect...
שמור ב:
| Main Authors: | , , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2013
|
| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3728587/ https://ncbi.nlm.nih.gov/pubmed/23900459 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02319 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|