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Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism
The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both elect...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3728587/ https://ncbi.nlm.nih.gov/pubmed/23900459 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02319 |
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