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A multilevel nonvolatile magnetoelectric memory
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. H...
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| Gepubliceerd in: | Sci Rep |
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| Hoofdauteurs: | , , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Nature Publishing Group
2016
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5041080/ https://ncbi.nlm.nih.gov/pubmed/27681812 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34473 |
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