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A multilevel nonvolatile magnetoelectric memory

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. H...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Sci Rep
Main Authors: Shen, Jianxin, Cong, Junzhuang, Shang, Dashan, Chai, Yisheng, Shen, Shipeng, Zhai, Kun, Sun, Young
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2016
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5041080/
https://ncbi.nlm.nih.gov/pubmed/27681812
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34473
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