Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of...

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Hlavní autoři: Seo, Jin-Suk, Jeon, Jun-Hyuck, Hwang, Young Hwan, Park, Hyungjin, Ryu, Minki, Park, Sang-Hee Ko, Bae, Byeong-Soo
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group 2013
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On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3694285/
https://ncbi.nlm.nih.gov/pubmed/23803977
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02085
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