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Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing
We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that th...
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| 主要な著者: | , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
American Institute of Physics
2012
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3537686/ https://ncbi.nlm.nih.gov/pubmed/23319827 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4772513 |
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