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High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the us...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Fujii, Mami N., Ishikawa, Yasuaki, Miwa, Kazumoto, Okada, Hiromi, Uraoka, Yukiharu, Ono, Shimpei
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4683535/
https://ncbi.nlm.nih.gov/pubmed/26677773
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep18168
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