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High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the us...
Tallennettuna:
| Julkaisussa: | Sci Rep |
|---|---|
| Päätekijät: | , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group
2015
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4683535/ https://ncbi.nlm.nih.gov/pubmed/26677773 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep18168 |
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