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Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that th...

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Detalhes bibliográficos
Main Authors: Machida, Emi, Horita, Masahiro, Ishikawa, Yasuaki, Uraoka, Yukiharu, Ikenoue, Hiroshi
Formato: Artigo
Idioma:Inglês
Publicado em: American Institute of Physics 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3537686/
https://ncbi.nlm.nih.gov/pubmed/23319827
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4772513
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