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Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external i...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2012
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3499168/ https://ncbi.nlm.nih.gov/pubmed/22937963 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-492 |
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