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Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique
GaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal...
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| Główni autorzy: | , , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Springer
2012
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| Hasła przedmiotowe: | |
| Dostęp online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3420328/ https://ncbi.nlm.nih.gov/pubmed/22559228 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-244 |
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