Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique

Por Zhang, Jiang-Yong, Liu, Wen-Jie, Chen, Ming, Hu, Xiao-Long, Lv, Xue-Qin, Ying, Lei-Ying, Zhang, Bao-Ping
Publicado em 2012

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells

Por Zhao, Wan-Ru, Weng, Guo-En, Wang, Jian-Yu, Zhang, Jiang-Yong, Liang, Hong-Wei, Sekiguchi, Takashi, Zhang, Bao-Ping
Publicado no Nanoscale Res Lett (2015)

Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells

Por Lv, Xue-Qin, Zhang, Jiang-Yong, Ying, Lei-Ying, Liu, Wen-Jie, Hu, Xiao-Long, Zhang, Bao-Ping, Qiu, Zhi-Ren, Kuboya, Shigeyuki, Onabe, Kentaro
Publicado em 2012

Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’

Por Mei, Yang, Weng, Guo-En, Zhang, Bao-Ping, Liu, Jian-Ping, Hofmann, Werner, Ying, Lei-Ying, Zhang, Jiang-Yong, Li, Zeng-Cheng, Yang, Hui, Kuo, Hao-Chung
Publicado no Light Sci Appl (2017)