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Fabrication and Characterization of a Tunable In-plane Resonator with Low Driving Voltage
This study presents the fabrication and characterization of a micromechanical tunable in-plane resonator. The resonator is manufactured using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The resonator is made of aluminum, and the sacrificial layer is silicon dioxide...
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| Главные авторы: | , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Molecular Diversity Preservation International (MDPI)
2009
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3345836/ https://ncbi.nlm.nih.gov/pubmed/22574000 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s90302062 |
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