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Fabrication and Characterization of a Tunable In-plane Resonator with Low Driving Voltage

This study presents the fabrication and characterization of a micromechanical tunable in-plane resonator. The resonator is manufactured using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The resonator is made of aluminum, and the sacrificial layer is silicon dioxide...

詳細記述

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書誌詳細
主要な著者: Kao, Pin-Hsu, Dai, Ching-Liang, Hsu, Cheng-Chih, Lee, Chi-Yuan
フォーマット: Artigo
言語:Inglês
出版事項: Molecular Diversity Preservation International (MDPI) 2009
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC3345836/
https://ncbi.nlm.nih.gov/pubmed/22574000
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s90302062
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