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SiC surface orientation and Si loss rate effects on epitaxial graphene
We have explored the properties of SiC-based epitaxial graphene grown in a cold wall UHV chamber. The effects of the SiC surface orientation and silicon loss rate were investigated by comparing the characteristics of each formed graphene. Graphene was grown by thermal decomposition on both the silic...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3323459/ https://ncbi.nlm.nih.gov/pubmed/22410299 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-186 |
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