Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD)

Epitaxial, graphitic carbon thin films were directly grown on C-face/ (0001̄) SiC and (0001) sapphire by chemical vapor deposition (CVD), using propane as a carbon source and without any catalytic metal on the substrate surface. Raman spectroscopy shows the signature of multilayer graphene/graphite...

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Detalhes bibliográficos
Main Authors: Hwang, Jeonghyun, Shields, Virgil B., Thomas, Christopher I., Shivaraman, Shriram, Hao, Dong, Kim, Moonkyung, Woll, Arthur R., Tompa, Gary S., Spencer, Michael G.
Formato: Artigo
Idioma:Inglês
Publicado em: 2010
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2957835/
https://ncbi.nlm.nih.gov/pubmed/20976026
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.jcrysgro.2010.07.046
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