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Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate
The optical properties of In(0.8)Ga(0.2)As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO(2)-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In(0.8)Ga(0.2)As SAQDs grown...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer
2012
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3311092/ https://ncbi.nlm.nih.gov/pubmed/22309499 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-104 |
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