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Chirped InGaAs quantum dot molecules for broadband applications
Lateral InGaAs quantum dot molecules (QDMs) formed by partial-cap and regrowth technique exhibit two ground-state (GS) peaks controllable via the thicknesses of InAs seed quantum dots (x), GaAs cap (y), and InAs regrowth (z). By adjusting x/y/z in a stacked QDM bilayer, the GS peaks from the two lay...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3379949/ https://ncbi.nlm.nih.gov/pubmed/22480323 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-207 |
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