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Chirped InGaAs quantum dot molecules for broadband applications

Lateral InGaAs quantum dot molecules (QDMs) formed by partial-cap and regrowth technique exhibit two ground-state (GS) peaks controllable via the thicknesses of InAs seed quantum dots (x), GaAs cap (y), and InAs regrowth (z). By adjusting x/y/z in a stacked QDM bilayer, the GS peaks from the two lay...

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Autors principals: Patanasemakul, Nirat, Panyakeow, Somsak, Kanjanachuchai, Songphol
Format: Artigo
Idioma:Inglês
Publicat: Springer 2012
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3379949/
https://ncbi.nlm.nih.gov/pubmed/22480323
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-207
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