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Self-Calibrated Humidity Sensor in CMOS without Post-Processing

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Interv...

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Detalhes bibliográficos
Main Authors: Nizhnik, Oleg, Higuchi, Kohei, Maenaka, Kazusuke
Formato: Artigo
Idioma:Inglês
Publicado em: Molecular Diversity Preservation International (MDPI) 2011
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3279210/
https://ncbi.nlm.nih.gov/pubmed/22368466
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s120100226
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