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Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate
We present a study of the optical properties of InAs self-assembled nanostructures grown by molecular beam epitaxy on GaAs(11N)A substrates (N = 3–5). Photoluminescence (PL) measurements revealed good optical properties of InAs quantum dots (QDs) grown on GaAs(115)A compared to those grown on GaAs(1...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Institute of Physics
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3277605/ https://ncbi.nlm.nih.gov/pubmed/22396623 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3677952 |
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