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High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26%...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3223256/ https://ncbi.nlm.nih.gov/pubmed/22040124 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-576 |
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