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Scaling properties of ballistic nano-transistors
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated I(D )- V(D)-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution,...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211455/ https://ncbi.nlm.nih.gov/pubmed/21711899 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-365 |
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