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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer gra...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2011
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211189/ https://ncbi.nlm.nih.gov/pubmed/21711670 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-141 |
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