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Spin effects in InAs self-assembled quantum dots
We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on app...
Tallennettuna:
| Päätekijät: | , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer
2011
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211160/ https://ncbi.nlm.nih.gov/pubmed/21711647 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-115 |
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