Cargando...

Spin injection in n-type resonant tunneling diodes

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X(−))...

Descrición completa

Gardado en:
Detalles Bibliográficos
Main Authors: Orsi Gordo, Vanessa, Herval, Leonilson KS, Galeti, Helder VA, Gobato, Yara Galvão, Brasil, Maria JSP, Marques, Gilmar E, Henini, Mohamed, Airey, Robert J
Formato: Artigo
Idioma:Inglês
Publicado: Springer 2012
Assuntos:
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC3506468/
https://ncbi.nlm.nih.gov/pubmed/23098559
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-592
Tags: Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!