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Spin injection in n-type resonant tunneling diodes
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X(−))...
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| Hlavní autoři: | , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2012
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3506468/ https://ncbi.nlm.nih.gov/pubmed/23098559 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-592 |
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