Spin injection in n-type resonant tunneling diodes

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X(−))...

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Bibliografiske detaljer
Main Authors: Orsi Gordo, Vanessa, Herval, Leonilson KS, Galeti, Helder VA, Gobato, Yara Galvão, Brasil, Maria JSP, Marques, Gilmar E, Henini, Mohamed, Airey, Robert J
Format: Artigo
Sprog:Inglês
Udgivet: Springer 2012
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3506468/
https://ncbi.nlm.nih.gov/pubmed/23098559
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-592
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