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Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy
We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2011
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211158/ https://ncbi.nlm.nih.gov/pubmed/21711645 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-113 |
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