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Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy
We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211158/ https://ncbi.nlm.nih.gov/pubmed/21711645 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-113 |
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